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Video s3
    Details
    Presenter(s)
    Jinhen Lee Headshot
    Display Name
    Jinhen Lee
    Affiliation
    Affiliation
    Nanyang Technological University
    Country
    Country
    Singapore
    Author(s)
    Display Name
    Jinhen Lee
    Affiliation
    Affiliation
    Nanyang Technological University
    Display Name
    Jianming Zhao
    Affiliation
    Affiliation
    Institute of Microelectronics, Agency for Science, Technology and Research
    Display Name
    Yuan Gao
    Affiliation
    Affiliation
    Institute of Microelectronics, Agency for Science, Technology and Research
    Abstract

    In this paper, a nanowatt comparator for always-on microelectromechanical systems (MEMS) switch wake-up sensor is presented. To achieve continuous event detection with nanowatt ultralow power (ULP) consumption, the comparator building blocks are designed to work in subthreshold region. Various circuit techniques including self-cascode transconductance, feedforward slew rate enhancement are adopted to optimize the circuit performance under nA power consumption. Programmable comparator hysteresis allows the flexibility to configure the comparator to operate in different environments. PVT-insensitive voltage/current bias circuits are included to provide stable bias to ensure robust operation across the process corners. The proposed circuit is designed and implemented in a standard 1P8M 0.13-µm CMOS process. The core circuit area is 220µm × 60µm. Post layout simulations show that the overall comparator power consumption is in the range of 5.2 − 7.8nW under 0.8V − 1.2V supply, the corresponding work bandwidth is up to 6kHz.

    Slides
    • A Nanowatt Comparator with Feedforward Slew Rate Enhancement and PVT-Insensitive Bias for Always-on MEMS Switch Wake-Up Sensor (application/pdf)