Details
Presenter(s)
Display Name
Lancon Leo
- Affiliation
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AffiliationNXP Semiconductors / IMS Bordeaux
- Country
Abstract
This paper presents a design methodology based on the EKV mosfet model for analog circuits. It is applied to design a baseband transimpedance amplifier in a CMOS 28nm bulk technology for automotive radar applications. It presents the model with a modification to better suit the application. Then, the presented model and the design method are verified with post-layout simulations.