A Voltage Swing Self-Adjustable (VSSA) Match-Line (ML) Sensing Scheme is presented for Content-Addressable Memories (CAMs). A simple ML voltage detector instead of a complicated fully differential one is proposed which enables ML voltage swing approaching to zero. Meanwhile, the scheme improves the robustness against process variation by means of voltage swing self-adjustment. Post-layout simulation results show the proposed 64-word x 144-bit ternary CAM, using 55-nm 1.2-V standard CMOS process, achieves 0.18fJ/bit/search for the ML power dissipation with less than 750ps search time.