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Video s3
    Details
    Poster
    Presenter(s)
    Corentin Pochet Headshot
    Display Name
    Corentin Pochet
    Affiliation
    Affiliation
    University of California, San Diego
    Country
    Abstract

    This paper presents an electrostatic discharge (ESD) protection circuit and reviews best practices to interface a CMOS analog-front end with off-chip high impedance (>10 GΩ) and high precision current (<0.1 pA resolution) sensors. The proposed circuit uses a buffer at the input/output (I/O) pin to drive the voltage across the ESD protection diodes to a near-zero value enabling leakage below 20 fA across the entire input range.

    Slides
    • Ultra-Low Leakage ESD Protection Achieving 10.5 fA Leakage (application/pdf)