This paper introduces a CMOS-Memristor active inductor topology to synthesize adjustable active inductors with inductance values exceeding those of on-chip passives by several orders of magnitude. A wide range of active inductance is synthesized by employing memristor to generate various biasing current for OTA. Thus, the gyration constant of proposed gyrator is proportional to memristance value this way excellent linearity is achieved. Our memristor is 20×20 μm2 metal-oxide bi-layer memristor which exhibits a non-volatile memristance range of 4.7kΩ to 170kΩ. The achieved active inductance range is from approximately 95µH to 1.55mH with an inductive bandwidth of 69MHz and 18MHz respectively. The power consumption is from 0.21mW to 1.95mW depending on the memristance and equivalent inductance.