This paper proposes a high speed modified Dickson charge pump. The proposed charge pump uses a p-channel metal oxide semiconductor (PMOS) instead of n-channel metal oxide semiconductor (NMOS) in an auxiliary stage so that the auxiliary stage node can provide higher voltage compared to the conventional counterpart with NMOS. The bulk connection of PMOS in the auxiliary stage is also modified to suppress the parasitic bipolar effect. The H-simulation program with integrated circuit emphasis (HSPICE) results with the Taiwan semiconductor manufacturing company (TSMC) 0.18µm process technology indicate that the proposed 5-staged circuit achieves a faster pump-up speed with 33% reduced ramp-up time at a supply voltage is 1.2 V to produce an output voltage of 7.13 V. Also, proposed circuit shows better performances in output ripple voltage and power efficiency due to the higher voltage from the auxiliary stage.