BAW resonator is a new technology raised during the last decade which shows better temperature stability compared to SAW, better selectivity, IC manufacturing process compatibility, and lower insertion loss. Filters based on BAWs show very promising results as well. However, BAW resonators still need optimization to achieve the high-quality factor also the temperature dependency is still a big problem. A novel Thin Film bulk acoustic resonator (FBAR) design is presented in this paper using aluminum nitride (AlN) as peizoelectric material and Tungsten (W) for the electrodes, with detailed electrical model and FEM simulations using COMSOL MULTIPHYSICS. In addition, Cadence Virtuoso is used to implement and simulate the electrical model. A resonance frequency of 2.4 GHZ is achieved with quality factor (QF) of 1548 and Temperature coefficient of frequency (TCF) ~ 4.6 (ppm/ oC).