We propose a Computing-in-Memory (CIM) platform with field-free spin-orbit torque magnetic random access memory (SOT-MRAM). The self-reference (SelfRef) method is designed to enhance the read reliability and allows to directly obtain logical results through memory-like read operations without adding logic cells. Memory read/write and logical NOT, AND/NAND and OR/NOR operations can be implemented in the same SOT-MRAM chip. The speed penalty caused by SelfRef scheme is acceptable thanks to the ultrafast switching of the SOT. The read reliability and logic correctness of the proposed CIM are demonstrated by hybrid simulation on a 40 nm technology node.