This paper presents a bootstrapped switch with an accelerated gate-voltage rising speed and a reduced on-resistance for high-speed ADCs. Compared to the classic bootstrapped switch, this design accelerates the rising speed of gate voltage through four novel techniques. In a 40 nm CMOS process, post-layout simulation results show that the rising speed of gate voltage is increased by 3.3 times compared to the classic thin-oxide bootstrapped switch circuit. And the on-resistance of the bootstrapped switch is reduced by 2.2 times compared to the classic structure, due to the larger gate voltage value.