An on-chip millimeter-wave (mm-wave) broad-band bandpass filter (BPF) developed in CMOS technology is reported. It is based on a two-layered implementation in which the circuit structure patterned in the top layer exhibits a highpass-type filtering response, whereas an upper stopband is created by the bottom-layer cell when coupled to the top-layer one to obtain a composite overall quasi-elliptic-type wide-band BPF functionality. The locations of the transmission zeros (TZs), which confer sharp-rejection capabilities to the total BPF, can be flexibly adjusted with the values of the capacitors that are employed in both layers. For practical-demonstration purposes, an on-chip passive-integrated prototype on silicon with 34.5-GHz center frequency and 61.2% relative 3-dB bandwidth is manufactured and characterized.