ICECS 2022
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Poster and Short Presentation
ID 6058

A 18.05 ppm/oC, 38.5 μW Bandgap Reference Based on Weak Inversion Region Operation Design
Details
Poster
Presenter(s)
Seyed Ali Asghar Hosseini Asl Headshot
Seyed Ali Asghar Hosseini Asl
Affiliation
Department of Electrical and Computer Engineering / Sungkyunkwan University
Country
South Korea
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Author(s)
Seyed Ali Asghar Hosseini Asl
Affiliation
Department of Electrical and Computer Engineering / Sungkyunkwan University
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Kang-Yoon Lee
Affiliation
Sungkyunkwan University
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Abstract

This paper presents a low-power, low-noise, and high-performance bandgap reference with a high-order compensation technique by using MOSFETs operating in the sub-threshold region. This work offers a temperature coefficient of 18.05 ppm/oC and a PSRR of -52 dB while consuming 35 µA current from an external power supply of 1.1 V. The BGR offers 1.26 nV/sqrt(Hz) of noise with an employed low pass filter at the output. The proposed bandgap reference is analyzed and implemented in the 40 nm CMOS SOI process, and the occupied die area is 142 µm × 374 µm.

Slides
  • A 18.05 ppm/oC, 38.5 μW Bandgap Reference Based on Weak Inversion Region Operation Design (application/pdf)
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