Details
Presenter(s)
Display Name
Rosana Rodriguez
- Affiliation
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AffiliationUniversitat Autonoma de Barcelona
- Country
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CountrySpain
Abstract
The beneficial role of noise in the performance of Hf-based memristors has been experimentally studied. The addition of an external gaussian noise to the bias circuitry positively impacts the memristors characteristics by increasing the OFF/ON resistances ratio. The known stochastic resonance effect has been observed, when changing the standard deviation of the noise. The influence of the additive noise on the memristor current-voltage characteristic and on the set and reset related parameters are also presented